copper nitride
英
美 [ˈkɑːpər ˈnaɪtraɪd]
【化】一氮化三铜
双语例句
- Optimization of bath composition for electroless copper plating on aluminum nitride ceramic surface
氮化铝陶瓷表面化学镀铜溶液组成的优化 - Copper nitride thin films were deposited on glass substrates by reactive radio-frequency ( RF) magnetron sputtering at various nitrogen fluxes.
采用反应射频磁控溅射的方法在不同的氮气分压的条件下，在玻璃基底上成功制备了氮化铜（Cu3N）薄膜。 - AFM ( atomic force microscopy) shows that the roughness of Fe-doped copper nitride film increases.
AFM显示铁掺杂使氮化铜薄膜粗糙度增加。 - X-ray diffraction ( XRD) shows that the copper nitride film growth prefers ( 111) direction, and the Fe-doped copper nitride film is weak crystalline.
XRD显示氮化铜薄膜择优（111）晶面生长，铁掺杂使氮化铜薄膜的结晶程度减弱。 - Preparation of the copper metallized aluminum nitride substrate
氮化铝陶瓷覆铜基板的研制 - Semiconductor properties of the copper nitride thin films
氮化铜薄膜的半导体特性 - The optical property and excellent character of low-temperature thermal decomposition of the copper nitride thin film make it has potential applications in the information storage.
氮化铜薄膜的光学性能及其突出的低温热分解特性，使得它在信息存储方面有广阔的应用前景。 - Influence of argon on deposition rate, structure, morphology and thermal properties of copper nitride film
Ar对柱状靶多弧直流磁控溅射制备的Cu3N薄膜的沉积速率、结构、形貌和热稳定的影响 - Analysis of the Structures and Compounds of Copper Nitride Films
氮化铜薄膜的结构与组成分析 - Deposition of Copper Nitride Thin Film and Its Physical Properties
氮化铜薄膜的制备及其物理性能 - The copper nitride film is very stable in room temperature and decomposed at lower temperature ( about 300 ℃). The optical reflectance changes greatly before and after decomposition. This is critical for write-once optical recording materials.
Cu3N薄膜在室温下相当稳定并且热分解温度较低（300℃左右），热分解前后薄膜的光学反射率有较大差别，这可使Cu3N薄膜用作一次性光记录材料。 - Study on Preparation and Property of Polycrystalline Copper Nitride Thin Films
多晶氮化铜薄膜制备及性能研究 - In recent years, copper nitride ( CU3N) thin films attracted more attentions and were investigated intensively because of its 'distinct structure and lower thermal-decomposition temperature, Cu_3N has potential applications in many fields such as optical storage, micro-electronic device, magnetic and so on.
Cu3N薄膜由于其特殊的结构以及较低的热分解温度在光存储、微电子等半导体领域有着广泛的应用前景，近些年来受到国内外学术界的广泛关注。 - In this paper, the possibility of copper direct bonding to aluminum nitride substrate is studied, and the bonding mechanism is investigated by means of SEM and EDX.
研究了铜与氮化铝陶瓷直接键合的可行性，运用扫描电镜（SEM）、电子能谱（EDX）对键合机理作了一定的分析和探讨。 - Copper nitride ( Cu 3N) thin films with nano-crystalline were deposited on glass substrates at a temperature of 100 ℃ by DC magnetron sputtering with a columnar target.
采用柱状靶多弧直流磁控溅射法，100℃基底温度下在玻璃衬底上制备了纳米氮化铜（Cu3N）薄膜。 - Some nitrides such as copper nitride have similar electrical properties to TM-oxides, which is considered as potential new resistive material.
其中，氮化铜材料拥有与过渡金属氧化物类似的电学性质，是潜在的新型阻变材料。 - Some main contents and innovations in this paper are listed as follows: I. Copper nitride thin films were prepared by reactive radio-frequency magnetron sputtering of pure Cu target on glass substrates with various N2 flow rate.
主要内容和创新点如下：Ⅰ.以纯铜靶和氮气为原料，采用反应射频磁控溅射法在玻璃基底上成功制备了氮化铜纳米薄膜。